A static RAM using cells like that in the circuit on
http://www.wam.umd.edu/~andyli/Circuit.JPG has cell supply voltage =
5V, and word-line voltages of zero at rest, 5V for reading and for
writing.  Digit-line voltages are pre-charged to 2.5V for reading; and
zero and 5V for writing. The cell uses devices for which (W/L) = 2
um/3 and abs(V_t) = 1 V with u_nC_0x = 2.5 u_pC_0x = 25 uA/V^2. what
is the threshold voltage at the drain of Q_1 or Q_2 at which the cell
will change state? and what currents supplied to or from the cell move
the cell output voltage half way from its stable state to the
threshold?

to clearifly my notation when i use V_t i mean V with a subscript t
everything after the _ is in the subscript. the circuit is posted on
the given web page.  see if you are able to answer this question.

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Clarification of Question by awl-ga on 16 Dec 2002 16:33 PST

do you think that i could get this answered by wednesday night, i have
a final exam coming up and this would really help my studying.  if i
want to cancel the question so please get back to me, thanks