Dear Brian,
I am reposting all the material below to make my answer offical.
As always it has been a pleasure to work with you.
Sincerely,
Bobbie7
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At the following link there are a few descriptions and end uses for
HBT pHEMT and Saw technologies.
http://www.gcsincorp.com/services/foundry_service.htm
The Erlangtech Learning Center provides a defintion of HBT.
HBT (Heterojunction Bipolar Transistor)
A transistor design that is used in GaAs, SiGe, and InP process
technologies to provide higher performance that traditional MESFET or
CMOS processes.
The Erlangtech Learning Center
http://www.erlangtech.com/news_and_events/glossary_alphaResultsH.html
Surface acoustic wave
"A surface acoustic wave (SAW) is a kind of wave used in piezoelectric
components of electronics circuits. SAW chips are employed in the
creation of filters, oscillators and transformers based on the
transduction of acoustic waves."
Wikipedia
http://en.wikipedia.org/wiki/Surface_acoustic_wave
Heterojunction bipolar transistor
"The Heterojunction Bipolar Transistor (HBT) is an improvement of the
bipolar junction transistor (BJT) that can handle signals of very high
frequencies up to several hundred GHz. It is common nowadays in
ultrafast circuits, mostly radio-frequency (RF) systems."
Wikipedia
http://en.wikipedia.org/wiki/Heterojunction_bipolar_transistor
"Pseudomorphic High Electron Mobility Transistors (PHEMT) are
extensively used in wireless communications and LNA applications.
These transistors find wide market acceptance because of their high
power added efficiencies (PAE) and low noise figures (NF). The
excellent properties of these transistors also make them attractive
for use in satellite communication systems including direct broadcast
satellite television (DBS-TV) and global satellite communication
systems. FET and PHEMT technology is also used in high-speed analog
and digital IC's such as 2.5-10 Gb/s lightwave communication systems.
The higher frequency response of InP HEMTs are currently finding use
in millimeter-wave communications (³ 40 Gb/s) and radar systems. OSEMI
can provide tailored doping profiles in our FET wafers. We are also
experts in PHEMT, HEMT, and InP FET design and MBE growth. We can
deliver the high performance you desire at reasonable costs."
"Advantages of MBE Grown GaAs PHEMT and InP HFET:
high power-added-efficiencies (PAE)
low noise figures (NF)
low power-delay product for high speed IC's
very good linear amplifiers
planar process technology
tailored doping for constant gm in FET
smaller die size for PHEMT
very high IC yields from MBE epiwafers
GaAs or InP Substrates
InGaP and InP etch stop layers"
OSemi Inc.
http://www.osemi.com/pseudomorphic_high_electron_mo.html
GaAs HBT
http://www.microwaves101.com/encyclopedia/MMICsemi.cfm#hbt
GaAs PHEMT
http://www.microwaves101.com/encyclopedia/MMICsemi.cfm#phemt
"The MwT Power PHEMT AlGaAs/InGaAs PHEMT
(Pseudomorphic-High-Electron-Mobility-Transistor) devices, MwT-PH7,
MwT-PH15, MwT-PH16 are ideally suited for applications requiring
high-gain and medium power up to 28 GHz frequency range. These devices
are equally effective for either wideband (e.g. 6 to 18 GHz) or
narrow-band applications."
http://www.mwtinc.com/newprods.asp
Companies that supply Transistors
http://transistors.globalspec.com/SpecSearch/Suppliers/Semiconductors/Discrete/Transistors/Transistors_All_Types
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HTB Technology is defined as:
?Heterojunction Bipolar Transistors (HBTs) are semiconductor devices
in which at least one of the two transistor junctions is formed by the
interface of two different and distinct materials. Examples of some of
the common acronyms denoting devices that employ HBT technology
include AlGaAs, InGaP, and SiGe. Typical HBT applications include, but
are not limited to, high-frequency high-power applications such as
microwave amplifiers, high-speed analog to digital converters, and
high-speed optical communication circuits. Examples of devices that do
not employ HBT technology include any semiconductor device in which
the entire die is composed of a single material, such as pure silicon
dice (silicon bipolar transistors, MOSFETs, JFETs, etc). GaAs MESFET
and PHEMT devices and diodes of any kind are not a concern.?
Maxwell
http://search.globalspec.com/goto/PDFViewer?pdfURL=http%3A%2F%2Fwww%2Emaxwell%2Ecom%2Fpdf%2Fme%2Fapp%5Fnotes%2FHBT%5FTechnology%5FCertification%2Epdf
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The following document is very informative:
Understanding Surface Acoustic Wave (SAW) Devices for Mobile and Wireless
Applications and Design Techniques
by Colin K. Campbell, Ph.D., D.Sc.
Session 16: "An Overview of SAW Devices For Mobile/Wireless Communications"
(56 Questions and Answers for Year 2005)
Here is an example question and answer:
"FBAR" (THIN) FILM BULK ACOUSTIC RESONATORS AND FILTERS FOR THE 2 TO 5 GHz RANGE
Question 47:
a) What is an "FBAR" and b) where is it used in wireless/mobile systems ?.
Answer 47:
a) "FBAR" stands for "(Thin) Film Bulk Acoustic Resonator. By
themselves FBAR resonators can be employed as feedback elements in
high frequency VCOs. Bandpass FBAR ladder-filter modules constructed
from FBAR resonators can also be employed as front-end duplexer
filters in the 2-GHz to 5-GHz range. As well as a small package size
(e.g., ~ 125 m3 in a PCS duplexer), FBAR duplexers have good
power-handling capability (e.g. > ~32 dBm in a PCS duplexer).
View all questions and answers here:
http://www3.sympatico.ca/colin.kydd.campbell/
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A Brief Overview of FBAR Technology
White Paper
Source: Agilent Technologies
Semiconductor Products Group
Wireless Semiconductor Division
Download here:
http://www.home.agilent.com/upload/cmc_upload/All/FBARwhitepaper.pdf
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EPCOS, the world market leader in surface acoustic wave technology,
provides a good article on SAW technology.
http://www.epcos.com/web/generator/Web/Sections/MagazineComponents/2003/20033/Applications/Article321,templateId=render,locale=en.html
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Fbar technology article
http://www.cieonline.co.uk/cie2/articlen.asp?pid=319&id=2889
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Agilent is a leading supplier of semiconductor components for modern
mobile handsets. They provide E-pHEMT, HBT power amplifiers, and FBAR
filters that save battery life and help shrink handset size,
http://www.rfdesign.info/news-desc/59/WS1102-and-WS1401-To-Provide-Improved-Talk-TIme-for-CDMA-Mobile-Handsets.html
High-Linearity Low-Noise Amplifier Built on Leading Edge E-pHEMT Technology.
?Building on Agilent Technologies' enhancement-mode pseudomorphic
high-electron-mobility transistor (E-pHEMT) technology, the new
MGA-53543 low noise amplifier features with low power consumption,
high linearity, low noise figure and high gain is ideal for using in
450MHz to 6GHz telecommunication systems including cellular/PCS/
W-CDMA basestations and wireless LAN.?
Agilent Technologies
http://www.arrowasia.com/en/arrowtimes/agilent-p.html
Agilent's E-pHEMT PA modules are available for both CDMA/AMPS and GSM handsets.
?Of the CDMA modules, the ACPM-7813 addresses the 800 MHz dual-mode
band, and the ACPM-7833 operates in the 1900 MHz (PCS) range for
handsets and wireless data terminal applications. The CDMA modules
offer an industry-best PAE rating of 40 percent, with E-pHEMT
technology that requires only a single, positive power supply. The
ACPM-7891 PA module is targeted at tri-band GSM/GPRS phones, and
offers superior PAE of up to 60 percent in GSM band and 56 percent in
both DCS and PCS bands.?
Agilent Technologies
http://www.home.agilent.com/cgi-bin/pub/agilent/editorial/cp_MiscEditorial.jsp?NAV_ID=-536884607.0.02&LANGUAGE_CODE=eng&ID=421384&COUNTRY_CODE=US
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On February 19, 2003, ANADIGICS introduced four new pHEMT RF switches
at the 3GSM World Congress.
?These high performance RF switch products address the requirements of
GSM, CDMA, EDGE, and WCDMA handsets by delivering low insertion loss,
high linearity, and high isolation. Manufactured on ANADIGICS' low
cost 6-inch manufacturing platform using the Company's pHEMT
technology, this family of RF switches delivers industry-leading
reliability and performance in low cost die and small 3mm x 3mm IC
packaging.?
ANADIGICS
http://www.anadigics.com/press/release.jsp?id=249
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Motorola
Motorola Inc.?s Semiconductor Products Sector (SPS) today announced it
has made an enhancement to its 0.18- and 0.35-micron silicon germanium
carbon (SiGe:C) heterojunction bipolar transistor (HBT) in a BiCMOS
process. Motorola SPS expects the process to reduce power consumption
by a factor of four and show a 60 percent improvement in peak
frequency performance.
http://www.reed-electronics.com/electronicnews/article/CA248469.html
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Fujitsu SAW Filter Products
?Fujitsu?s SAW Filters are highly reliable because the company
controls the manufacturing process from single crystal production to
final product. The Fujitsu SAW Filter is a band pass filter for mobile
communications equipment that realizes high stability by using a
single LiTaO3 (Lithium Tantalate) crystal with a large
electromechanical coupling coefficient. The ultra small SMT (Surface
Mount Technology) has been attained with Fujitsu?s own circuit design
and packaging technologies.?
?The filters feature sharp cut-off, low insertion loss and high power
handling capability (0.2W). Furthermore, no adjustments (matching
circuitry) are needed to use the filter. A reduction in size to
2.5x2.0 mm, and the low loss D2 series greatly contribute to the
downsizing and weight reduction of the final product. The F5 series
offers filters in the frequency range of 700 to 1000MHz, while the F6
series offers filters between 1000 and 2500MHz. And our SAW duplexers
are known worldwide as setting the industry standard.?
http://www.rfglobalnet.com/content/productshowcase/product.asp?docid=b157d9e7-03f0-11d4-8c2f-009027de0829
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TriQuint - SAW filters
?Unit shipments of SAW filters were the third highest quarterly total.
SAW filter volume grew approximately 27% in the 3Q of 2004 compared to
the 3Q of 2003. Revenues for integrated SAW based front end modules
grew 148% over the 2Q of 2004.?
http://www.three-fives.com/business_market_news/october04_mkt_bus_news/221004TriQuint_soft_quarter.htm
GSM SAW Filters
http://www.triquint.com/prodserv/apps/base_stations/gsm.cfm
CDMA SAW Filters
http://www.triquint.com/prodserv/apps/base_stations/cdma.cfm
TriQuint's Sawtek subsidiary provides SAW and BAW solutions for
wireless applications including handsets, infrastructure, datacom,
broadband, aerospace and defense
?Sawtek is now recognized as a global leader for high performance SAW
components and subsystems. Sawtek is the dominant global high-volume
SAW supplier to the CDMA handset market as well as the CDMA and GSM
base station markets. While continuing to expand its high-volume
consumer applications business, Sawtek retains its unique ability to
offer custom designs for both Military/Space and emerging market
applications. Sawtek merged with Triquint Semiconductor in 2001,
expanding the combined product offerings of both companies with a
focus on the development of integrated modules for the wireless
communications industry.?
?Sawtek produces thousands of different SAW devices at frequencies
ranging from 30MHz to nearly 3GHz for both low- and high-volume
programs in communications, cellular, modem, wireless data
transmission, radar, cordless phones, cable television, security
systems, and other signal processing applications. These SAW devices
include bandpass filters, delay lines, low-loss filters, resonator
filters, oscillators, ID tags, and SAW-based subsystems. In addition
to the many customer-specific products and technical assistance that
Sawtek provides, we also offer lines of standard bandpass filters for
both Radio Frequency (RF) and Intermediate Frequency (IF)
applications.?
http://www.triquint.com/company/divisions/sawtek/
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Skyworks Enters High-Growth BAW Filter Market
?BAW technology is the best choice for the market Skyworks serves
today and in the future. BAW filters can be built to have less than
one-third the footprint and less than half the height of equivalent
SAW filters, which are difficult to manufacture at high frequencies.
In addition, BAW filters can handle higher power, are less sensitive
to surface contamination, have better frequency stability, and are
more robust against failure during ESD or mismatched RF conditions.
When compared to Film Bulk Acoustic Resonator (FBAR) filters made as a
freestanding membrane, solidly mounted BAW filters fabricated on
specially designed acoustic mirrors can offer improved power handling
and easier integration into the flow of the fabrication process.?
Press Release: April 26, 2005
http://biz.yahoo.com/bw/050426/265285.html?.v=1
Types of SAW Filters
http://www.triquint.com/company/divisions/sawtek/filtertypes.cfm
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Renesas Technology Europe claims to supply more than half of the power
amplifiers in the GSM market.
?Renesas uses a high power variant of CMOS. The process technology we
have used for many years is long drain CMOS, LDMOS, says Stephen
Graham, RF product manager at Renesas. It's now offering significant
advantages because it's cost effective for integrating extra functions
such as power control. Gallium arsenide and other HBT technologies are
very complicated and use a lot of process steps.?
http://www.electronicsweekly.com/Article5297.htm
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Philips Semiconductors
Philips Semiconductors and TriQuint Semiconductor, Inc. ?signed an
agreement paving the way for a partnership that guarantees Philips
Semiconductors controlled access to TriQuint's InGaP
(Indium-Gallium-Phosphide) HBT (Heterojunction Bipolar Transistor)
150-mm wafer processing facilities, and provides for joint development
of future advanced high-performance process technologies.?
According to Thierry Laurent, executive vice president, Business Unit
Mobile Communications at Philips Semiconductors:
"In a module you have the opportunity to mix a range of technologies
in order to offer customers the very best price/performance ratio. We
believe that InGaP HBT is the best technology in which to implement
components such as the output stage of linear and high-efficient power
amplifier modules and front-end modules."
http://www.semiconductors.philips.com/news/content/file_806.html
Saw Filter Data Sheet
http://www.alcatel.com/space/obeqpt/payload/intfreq/p303.htm |
